Presenter: Kai Ni (RIT)
Description: We demonstrate a novel ferroelectric (FE) superlattice based multi-level cell (MLC) memory, which outperforms previous multi-state FE memory implemented using partial polarization switching, from the standpoint of device-to-device variation. We show that the FE superlattice consisting of alternate FE and dielectric (DE) thin layers provides a scalable approach for MLC implementation because: 1) the superlattice constructs controlled layer-bylayer polarization switching in the constituent FE layers; 2) the number of FE layers equals the number of stored bits; and, finally, (3) the switching of all the domains in a given coercive field (EC) distribution associated with one isolated peak suppresses the variation induced by partial polarization switching. Based on these, we experimentally demonstrate a 2- bit/cell FE superlattice memory and simulate a 3-bit/cell memory with excellent device-to-device variation.
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