Presenters: Ramamoorthy Ramesh (UC Berkeley), Azad Naeemi (Georgia Tech) and Dan Ralph, (Cornell)
Abstract: In this talk, we will discuss the status of development for materials to generate spin-orbit torques, reviewing recent research on heavy metals and alloys, oxides, and single-crystalline and sputtered topological materials. We will analyze the need for joint optimization of resistivity and spin-torque efficiency, and how requirements differ for devices with perpendicular and in-plane magnetic anisotropy. The modeling and design of various SOT-magnetic memory devices including in-plane, perpendicular and SOT+VCMA (voltage-controlled magnetic anisotropy) options will be presented next. Material and device level parameters will be optimized to achieve maximum array-level performance. Optimized memory options will be benchmarked against other magnetic memory devices and static random access memory (SRAM) in terms of density and read/write energy and delay.
This meeting is only available to the JUMP research community, such as Principal Investigators, Postdoc researchers, Students, and Industry/Government liaisons.