JUMP eWorkshop / Spin Hall Effects for Ultra-low Power, Current-driven Electronics


Location: webex

Presenters: Ramamoorthy Ramesh (UC Berkeley), Azad Naeemi (Georgia Tech) and Dan Ralph, (Cornell) 

Title: Spin Hall Effects for Ultra-low Power, Current-driven Electronics

Abstract: In this talk, we will discuss the status of development for materials to generate spin-orbit torques, reviewing recent research on heavy metals and alloys, oxides, and single-crystalline and sputtered topological materials.  We will analyze the need for joint optimization of resistivity and spin-torque efficiency, and how requirements differ for devices with perpendicular and in-plane magnetic anisotropy. The modeling and design of various SOT-magnetic memory devices including in-plane, perpendicular and SOT+VCMA (voltage-controlled magnetic anisotropy) options will be presented next. Material and device level parameters will be optimized to achieve maximum array-level performance. Optimized memory options will be benchmarked against other magnetic memory devices and static random access memory (SRAM) in terms of density  and read/write energy and delay. 

Azad Naeemi is a professor in the School of Electrical and Computer Engineering at the Georgia Institute of Technology. His research crosses the boundaries of materials, devices, circuits and systems, investigating integrated circuits based on conventional and emerging nanoscale devices and interconnects.
Dan Ralph is an experimental physicist, the F. R. Newman Professor of Physics at Cornell University and until recently the Director of the Cornell Nanofabrication Facility.  His research group and collaborators helped lead the discovery of spin-transfer torque and spin-orbit-torque for magnetic manipulation.  He also has interests in potential device applications of new quantum materials.

This meeting is only available to the JUMP research community, such as Principal Investigators, Postdoc researchers, Students, and Industry/Government liaisons.