ASCENT Theme 3 Liaison Meeting / Oxide Transistors with Conventional High-k Dielectric or Ferroelectric Dielectric

ASCENT Theme 3 Liaison Meeting 

Time: 4:00 pm - 5:00 pm

Location: Webex

Title: Oxide Transistors with Conventional High-k Dielectric or Ferroelectric Dielectric

Presenter: Peide Ye (School of Electrical and Computer Engineering, Purdue University)

Abstract: In this talk, we report on the experimental demonstration of robust beta-gallium oxide (β-Ga2O3) ferroelectric (FE) field-effect transistors (FeFETs) on a sapphire substrate operated up to 400 °C. Atomic layer deposited (ALD) Hf0.5Zr0.5O2 (HZO) is used as the ferroelectric FE dielectric. The HZO/β-Ga2O3 FeFETs are studied for their synaptic behavior applications at elevated temperatures. We will also extend the β-Ga2O3 to other transition-metal-oxides such as sputtered indium-tin-oxide and atomic-layer-deposited (ALD) In2O3 as channels showing outstanding transistor characteristics with conventional high-k dielectric as thin-film transistors or ferroelectric dielectric as FeFETs. 

This meeting is only available to the JUMP research community, such as Principal Investigators, Postdoc researchers, Students, and Industry/Government liaisons.