ASCENT Theme 4 Liaison Meeting
Time: 4:00 pm - 5:00 pm
Title: Microstructure and polycrystallinity in a ferroelectric field-effect transistor
Presenters: Asif Khan, Nujhat Tasneem and Sarah Lombardo (Georgia Tech)
Abstract: The promise of ferroelectric field-effect transistor for high-density, embedded memory application hinges largely upon the ability to port this technology to 10 nm node and beyond. However, at such scaled dimensions, a major challenge is the poly-crystallinity of the ferroelectric layer in the gate stack. Because a scaled FEFET can contain only a few grains varying in terms of size, shape, phase and orientation, microstructure is a major variability concern. To date, microstructural studies of HfO2 based ferroelectrics has been very limited, and all of such studies have been limited to MIM structures. In this liaison meeting, we will discuss our on-going work on understanding the microstructure of ferroelectric/antiferroelectric ZrO2 in both metal-insulator-metal (MIM) and metal-oxide-semiconductor (MOS) structures based on transmission electron microscopy and nanobeam electron diffraction.
This meeting is only available to the JUMP research community, such as Principal Investigators, Postdoc researchers, Students, and Industry/Government liaisons.