ASCENT Theme 3 Liaison Meeting
Time: 4:00 pm - 5:00 pm
Title: Update on Ferroelectric-Enhanced GaN-Channel FETs for Reconfigurable RF
Presenter: Patrick Fay (Notre Dame)
Abstract: An update on efforts to enhance the performance of GaN-channel transistors in RF and mm-wave switching applications through channel and ferroelectric gate stack engineering will be presented.
2776.027: RF Switches and Tunable Components
2776.028: Castellated Ferroelectric FETs for Reconfigurable RF
This meeting is only available to the JUMP research community, such as Principal Investigators, Postdoc researchers, Students, and Industry/Government liaisons