ASCENT Theme 3 Liaison Meeting / Update on Ferroelectric-Enhanced GaN-Channel FETs for Reconfigurable RF

ASCENT Theme 3 Liaison Meeting 

Time: 4:00 pm - 5:00 pm

Location: Webex

Title: Update on Ferroelectric-Enhanced GaN-Channel FETs for Reconfigurable RF

Presenter: Patrick Fay (Notre Dame)

Abstract:

Abstract: An update on efforts to enhance the performance of GaN-channel transistors in RF and mm-wave switching applications through channel and ferroelectric gate stack engineering will be presented. 

ASCENT Tasks:
2776.027: RF Switches and Tunable Components 
2776.028: Castellated Ferroelectric FETs for Reconfigurable RF 

 

This meeting is only available to the JUMP research community, such as Principal Investigators, Postdoc researchers, Students, and Industry/Government liaisons