Ferroelectric HZO: Low Temperature Deposition, Reliability and 2T1C FeRAM
Presenter: Jae Hur (Georgia Tech)
The HfO2-based ferroelectric device has obtained great attention as embedded non-volatile memory (eNVM) or in-memory computing applications. CMOS compatibility and scalability of the HfO2-based ferroelectric material have been the main driving forces in both research and industry fields of memory devices. Its ferroelectricity arises when the doped/alloyed HfO2 is annealed at a temperature ~400 oC or higher.
In this presentation, we explore the Hf0.5Zr0.5O2 (HZO) in terms of its potential to be utilized in future ferroelectric memory devices at back-end-of-line (BEOL). We firstly investigate the reliability of the HZO with its switching characteristics, cycling endurance, and multi-state retention. Besides, the effect of low temperature (350 oC) annealing on the HZO is studied by controlling the total annealing time. Finally, we demonstrate the 2T1C FeRAM structure using ferroelectric HZO capacitor for scalable FeRAM towards advanced technology node.
Jae Hur is a postdoctoral researcher at the Georgia Institute of Technology in Prof. Shimeng Yu’s group. He is currently researching ferroelectric HfO2-based memory devices/circuits for embedded non-volatile memory and neuromorphic synaptic device applications.
He received the B.S., M.S., and Ph.D. degrees from the Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Korea, in 2013, 2015, and 2019 respectively. His former research interests include nano-scale electron device (mostly transistor) fabrication/simulation/modeling and characterization. The title of his Ph.D. dissertation is “Transistor Leakage Considering Source/Drain Extension Region”.
He has published >40 peer-reviewed journal papers and >10 international conference papers ranging from fabrication/simulation/modeling of conventional CMOS, neuromorphic and ferroelectric devices/circuits.
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