BEOL-Compatible Atomic Layer Thin In2O3Transistors for 3D Monolithic Integration
Task 2776.005 Orbitally Engineered Wide-gap Complementary TMO FETs with Record Ion-Ioff Current Ratios
Presenter: Peide Ye (Purdue)
Abstract: In this work, we demonstrate atomic-layer-deposited (ALD)indium oxide (In2O3) transistors with record-high drain current of 2.2 A/mm at VDS of 0.7 V among oxide semiconductor transistors with enhancement-mode operation. The impact of back-end-of-line(BEOL) compatible low-temperature annealing are systematically studied on these highly scaled In2O3 transistors with channel length (Lch)down to 40 nm, channel thickness (Tch) down to 1.2 nm, and equivalent oxide thickness (EOT) of 2.1 nm, at annealing temperatures from 250 oC to 350 oC in N2, O2, and forming gas environments. Remarkably, the ALD In2O3 devices are found to be stable in a hydrogen environment, being less affected by the well-known hydrogen doping issue in IGZO. Beyond all demonstrated planar oxide semiconductor transistors, we also demonstrate the first In2O33D Fin transistors fully using the conformability of ALD process.
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