Material and Transport Characterization of Gd-alloyed Bismuth Selenide for Spintronic Applications
Speakers: Protyush Sahu and Jian-Ping Wang
Task: 2776.020: Spin Orbit and Spin Hall Effect Devices
Abstract: Inverse spin Hall effect (ISHE) based magnetization reading schemes have gained popularity because of their superior scaling properties for spintronic devices. Such systems rely on spin injection from ferromagnet into a spin Hall channel, which is then converted into charge current due to ISHE. CMOS integration requires an output voltage of 100mV, which requires an exploration of resistive spin Hall channels. We developed Gd-alloy of Bismuth Selenide and found it can significantly increase the resistivity owing to room temperature Mott hopping. Physics analysis was done to find the bounds of spin diffusion length and inverse spin-orbit coupling length to achieve required voltage. Material and chemical characterizations were done by TEM, which shows an amorphous film. We performed spin pumping on CFB(5)/BSG(6,8,12,16) to characterize the spin to charge conversion and its promise for the ISHE read scheme.
Protyush Sahu received his bachelor's degree in electronics and communications engineering at National Institute of Technology, Rourkela in India. Following that, he came to the University of Minnesota for his PhD. He joined the JUMP program under Prof. Jian-Ping Wang. His work focuses on physics and material science of spin Hall channels for spintronic logic and memory applications.
This meeting is only available to the JUMP research community, such as Principal Investigators, Postdoc researchers, Students, and Industry/Government liaisons.