Trap Capture and Emission Dynamics in Ferroelectric Field-Effect Transistors and their Impact on Device Operation and Reliability
August 25, 4:00pm and 8:00pm eastern
Presenter: Nujhat Tasneem (PhD Student, Electrical and Computer Engineering, Georgia Institute of Technology, working with Prof. Asif Khan)
Abstract: We track carrier capture and emission dynamics in n-type ferroelectric field effect transistors by directly and separately measuring the trap related hole and electron currents through the body terminal and shorted source-drain, respectively. We observe that with fatigue cycling, as the number of trap states increases, the rate of emission of trapped charges decreases leading to a decline in the memory window and an increase in the read delay required to observe a given memory window. These results suggest that the rate of neutralization of trapped charges in the gate oxide stack, particularly in the interfacial layer needs to be accelerated to enable faster read delay, and ultra-fast embedded memory with improved reliability. The universality of the suggested mechanisms is confirmed in FEFETs fabricated in different facilities.
Theme 4, Task: 2776.071 Experimental Study of Defect Generation and Fundamental Limits of Endurance in Ferroelectric and Antiferroelectric H2O
This meeting is only available to the JUMP research community, such as Principal Investigators, Postdoc researchers, Students, and Industry/Government liaisons.