Theme 1B / Advanced ALD/CVD Processing and Chemistry

Advanced ALD/CVD Processing and Chemistry

Time: 4:00pm ET - May 10, 2022

The ASCENT ALD experimental team will showcase recent results being presented by their groups at the ASD, ALD, and IITC which is not covered in the recent liaison telecons.  (1) Kummel –(UCSD).  Using pulsed CVD HfO2/Al2O3, TiO2/Al2O3, and HfO2/TiO2 nanolaminates were selectivity deposited without passivants up to 40nm in thickness.  The selectivity was greater than corresponding ALD processes.  With proper choice of precursors and substrates, the common lateral spread (mushrooming) of selective growth can be reduced.  (2) George – Colorado Thin film growth and etching processes can be greatly enhanced using low energy electrons (~100 eV).  The electrons can (1) desorb surface species to open up active sites and (2) dissociate molecules in the background gas phase that provide radicals for surface adsorption.  These radicals can help tune the film composition or lead to etching.  Examples of possible electron-enhanced processing using reactive background gases will be discussed including growth of ternary nitride materials and etching of metals & TMDs.  (3) Winter- Wayne State.  Ru and Re can be deposited by ALD using non-oxidative co-reactants.  This is critical since a primary applications of Ru is for vias on Cu interconnects and oxidative precursor both induce CuOx formation and diffusion of Cu to the top of the Ru growth surface.

This meeting is only available to the JUMP research community, such as Principal Investigators, Postdoc researchers, Students, and Industry/Government liaisons.