ASCENT Theme 2 Liaison Meeting/Epitaxial HZO and LFO

Epitaxial HZO and LFO

Presenter: R.Ramesh (UC Berkeley)

Epitaxial HZO: a model system to understand origins of ferroelectricity: We have figured out a way to grow epitaxial HZO and Co-doped HZO thin films using an epitaxial conducting oxide top and bottom electrodes. With this approach, we are now able to study the onset of ferroelectricity and the thickness dependence of ferroelectricity without interference from granularity and possible chemical interactions with the bottom/top electrodes. Thickness dependence studies show that the ferroelectricity is quite stable upto ~30nm and at 40nm, there is still a signature of polar order, although weak. We have carried out detailed xray and electron microscopy based structural studies complemented by PFM and SHG studies to probe the polar order. Preliminary studies of Co-doping show promise for the possibility of co-existence of magnetism and ferroelectricity. I will describe our progress to date.

Please note, this meeting is only available to the JUMP research community, such as Principal Investigators, Postdoc researchers, Students, and Industry/Government liaisons