Title: Fully transparent field-effect transistor with high drain current and on-off ratio
Presenter: Jisung Park (Cornell) (Darrell Schlom's Group)
We report a fully transparent thin-film transistor utilizing a La-doped BaSnO3 channel layer that provides a drain current of 0.468 mA/𝜇m and an on-off ratio of 1.5×108. The La-doped BaSnO3 channel is grown on a 100-150 nm thick unintentionally doped BaSnO3 buffer layer on a (001) MgO substrate by molecular-beam epitaxy. Unpatterned channel layers show mobilities of 127 to 181 cm2V-1s-1 at carrier concentrations in the low to mid 1019 cm–3 range. The BaSnO3 is patterned by reactive ion etching under conditions preserving the high mobility and conductivity. Using this patterning method, micron-scale thin film transistors exhibiting complete depletion at room temperature are achieved. The sizes of previous BaSnO3 field effect transistors were limited to 100 𝝁m scale since there was no proper patterning method. The patterning method developed in this work enables making various micro-scale devices based on BaSnO3. Further optimization of the contact material and gate dielectric is expected to improve the device performance even better. These results demonstrate the tremendous potential of BaSnO3 for the future of transparent electronics.
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