High Performance β-Ga2O3 Nano-membrane FETs
Peide D. Ye, Jinhyun Noh, Hagyoul Bae
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, U.S.A.
β-Ga2O3 based field-effect transistor (FET) is regarded as a promising candidate for the next generation power electronics due to its ultra-wide bandgap of 4.5-4.8 eV, estimated critical field (Ec) of 8 MV/cm and decent intrinsic electron mobility limit of 250 cm2/Vs, yielding a high BFOM of more than 3000, which is several times higher than GaN and SiC. Meanwhile, β-Ga2O3 crystal also possesses a unique property that its (100) surface has a large lattice constant of 12.23 Å along  direction, which allows a facile cleavage into thin belts or nano-membranes. Therefore, by transferring β-Ga2O3 nano-membrane from its bulk substrate to a foreign substrate, we can fabricate β-Ga2O3 on insulator (GOOI) FETs and then explore material and device potentials without using many β-Ga2O3 epi-wafers. In this talk, we will update our company sponsors the new progress under the task 2776.030 on (1) demonstrating a record high drain current density with a minimized self-heating effect on a high thermal conductivity substrate (2) demonstrating a high drain current density device with fin-structure (3) demonstrating a robust ferroelectric FET operated at temperature as high as 400 oC. We will also discuss the progress and challenges on the on-going work and plans.
Please note, this meeting is only available to the JUMP research community, such as Principal Investigators, Postdoc researchers, Students, and Industry/Government liaisons