ASCENT Theme 1 Liaison Meeting / BEOL-Compatible Atomic Layer Thin In2O3Transistors for 3D Monolithic Integration

BEOL-Compatible Atomic Layer Thin In₂O₃Transistors for 3D Monolithic Integration

Task 2776.005 Orbitally Engineered Wide-gap Complementary TMO FETs with Record Ion-Ioff Current Ratios 

Presenter: Peide Ye (Purdue)

Abstract: In this work, we demonstrate atomic-layer-deposited (ALD)indium oxide (In₂O₃) transistors with record-high drain current of 2.2 A/mm at V_DS of 0.7 V among oxide semiconductor transistors with enhancement-mode operation. The impact of back-end-of-line(BEOL) compatible low-temperature annealing are systematically studied on these highly scaled In₂O₃ transistors with channel length (L_ch)down to 40 nm, channel thickness (T_ch) down to 1.2 nm, and equivalent oxide thickness (EOT) of 2.1 nm, at annealing temperatures from 250 ^oC to 350 ^oC in N₂, O₂, and forming gas environments. Remarkably, the ALD In₂O₃ devices are found to be stable in a hydrogen environment, being less affected by the well-known hydrogen doping issue in IGZO. Beyond all demonstrated planar oxide semiconductor transistors, we also demonstrate the first In₂O₃3D Fin transistors fully using the conformability of ALD process.

This meeting is only available to the JUMP research community, such as Principal Investigators, Postdoc researchers, Students, and Industry/Government liaisons.