Title: Experimental and Theoretically Insight into Selective and Low Resistivity Ru and Nitride ALD
Presenters: KJ Cho (UT Dallas), Andrew Kummel (UCSD), Steven George (U-Colorado Boulder)
Theme1 will present on selective and low resistivity ALD of metals, with a focus on Ru and TiN. Prof. K.J. Cho will show DFT results explaining the mechanisms by which Ru can be selectively deposited by ALD from various precursors on metals but not on alkyl terminated insulators such as SiCOH; the role of defects in limiting the selectivity will be explained. Prof. Andrew Kummel will present on a bilayer Ru ALD process with sub 8 micro-ohm-cm resistivity: first, an oxygen-free Ru ALD is performed to protect the substrate from oxidation and second a very low resistivity Ru ALD is performed with O2 as a coreactant. Prof. Steve George will show how electron enhanced ALD can be used to grow Ru films without any coreactant and grow ultra thin TiN films without halogen precursors.
2776.009: Selective Atomic Layer Deposition (ALD) of Metals / S. George
2776.002: Multi-scale-DFT-KMC-PFM Modeling of Low Temperature TMD Growth / K. Cho
2776.010 Self-aligned Monolayer (SAM) Enabled Interconnect Barrier at the Atomic Limit / A. Kummel
This meeting is only available to the JUMP research community, such as Principal Investigators, Postdoc researchers, Students, and Industry/Government liaisons.