Hi-K and Ferroelectric AlScN and its use in AlScN/GaN High Electron Mobility Transistors
Presenters: Joseph Casamento, Thai-Son Nguyen, and Debdeep Jena [Cornell University]
Abstract: Like HfO2 and HZO is for Silicon, in the past two years, remarkable high-K and ferroelectric properties have been unearthed in AlScN, leading to the discovery of an entirely new class of ferroelectric nitrides which are CMOS compatible. In this talk, three speakers will discuss a) the hi-K and ferroelectric properties of AlScN and its epitaxial integration with GaN (Casamento), b) measurement and characterization of high electron mobility 2DEG channels in such heterostructures (Nguyen), and c) its use in nitride transistors, towards fully epitaxial hi-K HFETs, and ferroFETs (Jena).
Joseph Casamento is pursuing a PhD at Cornell University. His research interests span hi-K and ferroelectric nitrides and their integration with GaN for electronics and photonics. In addition he has investigated interplay of ferroelectricity and magnetism in multiferroic materials and their use for low power electronics. He will complete his PhD in Spring 2022.
Thai-Son Nguyen is a second year PhD student at Cornell University. He is exploring the integration of hi-K and ferroelectric nitride layers with high mobility electron and hole channels, and the effect of these layers on the transport properties and scattering of the carriers.
Debdeep Jena is the David Burr Professor at Cornell University. His teaching and research interests are in the materials, device and physics of semiconductors. He is the author of an upcoming textbook on the subject (Link).
This meeting is only available to the JUMP research community, such as Principal Investigators, Postdoc researchers, Students, and Industry/Government liaisons.