3D Ferroelectric TCAM
SRC and DARPA sponsored ASCENT center continues its strong presence at the 2021 IEEE International Electron Devices Meeting (IEDM) with a new record of 12 contributed papers and 2 invited papers. IEDM is is the world's preeminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling. The papers show progress in a variety of domains such as gallium nitride based transistors for efficient power delivery, atomically thin channel transistors, ultra-thin gate stack transistors, back-end-of-the-line (BEOL) compatible thin film transistors, monolithic 3D integration of ternary content addressable memory stacks, capacitorless cryogenic DRAM and various genres of in-memory compute fabrics.